A digital temperature and voltage sensor that can reduce effects of degradation in VLSIs

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K20236
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 60040:Computer system-related
• Research Institution: Kyushu Institute of Technology
• Principal Investigator: Miyake Yousuke 九州工業大学, 大学院情報工学研究院, 研究職員 (60793403)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: 温度センサ / 電圧センサ / 劣化 / リングオシレータ / LSIテスト / フィールドテスト / VLSI設計技術 / ディペンダブル・コンピューティング

Outline of Final Research Achievements

Since the performance of LSIs varies depending on the temperature and voltage inside the chip, monitoring the heat generation status and voltage fluctuation of the chip can be used to improve system performance and reliability. In order to continue to operate sensors in the field for a long period of time, it is indispensable to take measures against the degradation phenomenon.
The purpose of this work is to develop a digital temperature voltage sensor technology that can reduce the effects of degradation in VLSIs. A test chip with an aging-tolerant structure was designed using 65nm CMOS technology. Deterioration evaluation was proposed by a long-term reliability test that actually gives high stress conditions such as high temperature and high voltage to the chips. Using the obtained degradation data, we proposed a prediction model that reflecting changes in degradation trends due to the operating environment of chips in the field, and evaluated its effectiveness.

Free Research Field

計算機システム関連

Academic Significance and Societal Importance of the Research Achievements

本研究ではセンサに劣化が生じた場合でも測定精度を維持するために，実チップでの劣化評価やフィールドでの運用状況に合わせて劣化予測のモデルを更新する手法などについての開発を行った．センサの劣化予測技術はVLSIのフィールド高信頼化が期待でき，予知保全に寄与するため，社会への波及効果は大きい．さらに，製品寿命を考慮したライフエンド設計への適用等，幅広い用途を見込むことができる．