2010 Fiscal Year Final Research Report
Pyroelectric infrared sensor using carbon nanotube FETs with ferroelectric gate
| Project/Area Number |
20241035
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Osaka Prefecture University |
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Principal Investigator |
AKITA Seiji Osaka Prefecture University, 工学研究科, 教授 (60202529)
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| Project Period (FY) |
2008 – 2010
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| Keywords | カーボンナノチューブ / マイクロ・デバイス / 強誘電体 / 光センサ / ナノ材料 |
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| Research Abstract |
We have developed carbon nanotube (CNT) field effect transistors (FETs) with ferroelectric thin films as gate insulators and applied to infrared sensors using pyroelectric effect of the ferroelectric thin films. In the case of FETs showing apparent semiconductive nature, the devices responded to the light inversely expecting from the pyroelectric effect due to the photoconductive effect of the CNTs. Additionally, we have found that the yield of the device with the response depending on the polarization direction of the ferroelectric film was much improved by covering the CNT channel with ionic liquid.
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