Fabrication of ordered array structure using strained one-dimensional structure of Si(110)

2011 Fiscal Year Final Research Report

• Project/Area Number: 20310064
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Nanomaterials/Nanobioscience
• Research Institution: Japan Atomic Energy Agency
• Principal Investigator: ASAOKA Hidehito 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究主幹 (40370340)
• Co-Investigator(Kenkyū-buntansha): YAMADA Yoichi 筑波大学, 大学院・数理物質科学研究科, 助教 (20435598) ; YAMAZAKI Tatsuya 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究員 (30465992) ; SHAMOTO Shin-icni 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究主席 (90235698)
• Co-Investigator(Renkei-kenkyūsha): SUEMITSU Maki 東北大学, 電気通信研究所, 教授 (00134057) ; TOYOSHIMA Yasutake 産業技術総合研究所, エネルギー技術研究部門, 主任研究員 (90357583)
• Project Period (FY): 2008 – 2011
• Keywords: ナノ構造形成 / 制御

Research Abstract

The well-controlled surface preparation method for Si(110) template, the surface kinetics, and the surface stress for fabrication of low-dimensional nanostructures were investigated. As a result, we obtained well-defined single domain of Ge(110)-16×2 and Si(110)-16×2 surfaces and found the alignment of C_<60> to the stable adsorption sites for realizing the one-dimensional structure. These results indicate the guideline to achieve well-ordered functional nanostructure on the templates.

Research Products

• [Journal Article] Ordering of C_<60> on one-dimensional template of single-domain Ge(110)-16x2 and Si(110)-16x2 surfaces (2012)
  • Author(s): Y. Yokoyama, A. Sinsarp, Y. Yamada, H. Asaoka and M. Sasaki
  • Journal Title: Appl. Phys. Express Volume: 5 Pages: 025203(1-3)
  • DOI: doi:10.1143/APEX.5.025203
  • Peer Reviewed
• [Journal Article] Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on silicon (2012)
  • Author(s): T. Yamazaki, H. Asaoka, T. Taguchi, S. Yamamoto, D. Yamazaki, R. Mruyama, M. Takeda, S. Shamoto
  • Journal Title: Thin Solid Films Volume: 520 Pages: 3300-3303
  • DOI: doi:10.1016/j.tsf.2011.10.081
  • Peer Reviewed
• [Journal Article] Surface analysis of single-crystallineβ-FeSi_2 (2011)
  • Author(s): Y. Yamada, M. Wei, H. Asaoka, H. Yamamoto, F. Esaka, H. Udono and T. Tsuru
  • Journal Title: Physics Procedia Volume: 11 Pages: 67-70
  • DOI: doi:10.1016/j.phpro.2011.01.034
  • Peer Reviewed
• [Journal Article] Epitaxial growth of largely mismatched crystals on H-terminated Si(111) surfaces (2010)
  • Author(s): H. Asaoka
  • Journal Title: J. Phys Volume: 22 Pages: 474007(1-7)
  • DOI: doi:10.1088/0953-8984/22/47/474007
  • Peer Reviewed
• [Journal Article] Single-Domained Si(110)-16×2 (2008)
  • Author(s): Y. Yamada, A. Girard, H. Asaoka
  • Journal Title: J. Phys Volume: 100 Pages: 072018(1-4)
  • DOI: doi:10.1088/1742-6596/100/7/072018
  • Peer Reviewed
• [Journal Article] SR-PES and STM observation of metastable chemisorption state of oxygen on Si(1 1 0)-16x2 surface (2008)
  • Author(s): Y. Yamamoto, H. Togashi, A. Kato, Y. Takahashi, A. Konno, Y. Teraoka, A. Yoshigoe, H. Asaoka, M. Suemitsu
  • Journal Title: Appl. Surf. Sci Volume: 254 Pages: 6232-6234
  • DOI: doi:10.1016/j.apsusc.2008.02.148
  • Peer Reviewed
• [Journal Article] Controlling the surface chirality of Si(110) (2008)
  • Author(s): Y. Yamada, A. Girard, H. Asaoka, H. Yamamoto, S. Shamoto
  • Journal Title: Phys. Rev. B Volume: 77 Pages: 153305(1-3)
  • DOI: doi:10.1103/PhysRevB.77.153305
  • Peer Reviewed
• [Journal Article] Real-time stress analysis of Ge nanodot growth on H-terminated Si(111)-1x1 and Si(111)-7x7 surfaces (2008)
  • Author(s): H. Asaoka, T. Yamazaki, S. Shamoto
  • Journal Title: Curr. Appl. Phys Volume: 8 Pages: 246-248
  • DOI: doi:10.1016/j.cap.2007.10.052
  • Peer Reviewed
• [Journal Article] Surface preparation and characterization of single crystallineβ-FeSi_2 (2008)
  • Author(s): Y. Yamada, I. Wakaya, S. Ohuchi, H. Yamamoto, H. Asaoka, S. Shamoto, H. Udono
  • Journal Title: Surf. Sci Volume: 602 Pages: 3006-3009
  • DOI: doi:10.1016/j.susc.2008.07.035
  • Peer Reviewed
• [Journal Article] Si(110)-16×2単一ドメイン表面の作製 (2008)
  • Author(s): 山田洋一, Antoine Girard,朝岡秀人,山本博之,社本真一
  • Journal Title: 表面科学 Volume: 29 Pages: 401-406
  • URL: https://www.jstage.jst.go.jp/article/jsssj/29/7/29_7_401/_pdf
  • Peer Reviewed
• [Presentation] Ge(110)-16x2及びSi(110)-16x2単一ドメイン表面をテンプレートとした分子ナノワイヤー作製 (2012)
  • Author(s): 山田洋一、アッサウィンスィンサップ、横山有太、朝岡秀人、佐々木正洋
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-17
• [Presentation] サーファクタントを利用したGe/Siヘテロ成長過程におけるストレス・表面構造の同時観察 (2012)
  • Author(s): 朝岡秀人、山崎竜也、社本真一、S. N. Filimonov、末光眞希
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-15
• [Presentation] In situ observation of stress and strain evolution during surfactant-mediated growth of Ge on Si (2011)
  • Author(s): H. Asaoka, T. Yamazaki, S. Shamoto
  • Organizer: The XXII International Congress and General Assembly of the International Union of Crystallography(IUCr2011)
  • Place of Presentation: Madrid Spain
  • Year and Date: 20110825-26
• [Presentation] Controlled clustering of Ge on Si(110) substrate (2011)
  • Author(s): Y. Yokoyama, Y. Yamada, H. Asaoka, M. Sasaki
  • Organizer: The 6th International Symposium on Surface Science(ISSS-6)
  • Place of Presentation: Tokyo Japan
  • Year and Date: 2011-12-13
• [Presentation] Selectivity adsorption of organic molecules on the Si(110)-16×2 single domain surface (2011)
  • Author(s): Y. Yokoyama, Y. Yamada, H. Asaoka, M. Sasaki
  • Organizer: 15th International Conference on Thin Films(ICTF-15)
  • Place of Presentation: Kyoto Japan
  • Year and Date: 2011-11-09
• [Presentation] Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on silicon (2011)
  • Author(s): T. Yamazaki, H. Asaoka, T. Taguchi, S. Yamamoto, D. Yamazaki, R. Mruyama, M. Takeda, S. Shamoto
  • Organizer: 7th International Conference on Si Epitaxy and Heterostructures(ICSI-7)
  • Place of Presentation: Leuven Belgium
  • Year and Date: 2011-08-30
• [Presentation] Neutron reflectometry studies of hetero-interfacial H layer in highly lattice-mismatched epitaxy on Si (2011)
  • Author(s): H. Asaoka, T. Yamazaki, D. Yamazaki, M. Takeda and S. Shamoto
  • Organizer: 17th European Molecular Beam Epitaxy Workshop(Euro-MBE)
  • Place of Presentation: L' Alpe d' Huez France
  • Year and Date: 2011-03-21
• [Presentation] Organic monolayers on the Si(110)-16×2 single domain surface (2010)
  • Author(s): Y. Yokoyama, Y. Yamada, H. Asaoka, M. Sasaki
  • Organizer: 18th International Colloquium on Scanning Probe Microscopy
  • Place of Presentation: Shizuoka
  • Year and Date: 2010-12-09
• [Presentation] Si(110)-16x2単一ドメイン表面上の有機分子薄膜形成 (2010)
  • Author(s): 横山有太,山田洋一,朝岡秀人,佐々木正洋
  • Organizer: 第30回表面科学講演大会
  • Place of Presentation: 大阪
  • Year and Date: 2010-11-06
• [Presentation] Surface analysis of single-crystallineβ-FeSi_2 (2010)
  • Author(s): Y. Yamada, M. Wei, H. Asaoka, H. Yamamoto, F. Esaka, H. Udono and T. Tsuru
  • Organizer: Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics(APAC-SILICIDE 2010)
  • Place of Presentation: Ibaraki
  • Year and Date: 2010-07-24
• [Presentation] 終端されたSi(110)-16×2単一ドメイン表面上の有機分子薄膜作製 (2010)
  • Author(s): 横山有太,山田洋一,朝岡秀人,佐々木正洋
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 神奈川
  • Year and Date: 2010-03-18
• [Presentation] Si(110) 16x2表面の制御 (2009)
  • Author(s): 朝岡秀人
  • Organizer: 東北大学電気通信研究所共同プロジェクト研究会「半導体ゲートスタック・ナノ構造形成過程のダイナミクスと応用に関する研究」、東北大学電気通信研究所
  • Place of Presentation: 宮城
  • Year and Date: 2009-03-09
• [Presentation] Surface stress relief in Bi-mediated Ge growth on Si (2009)
  • Author(s): H. Asaoka, T. Yamazaki, S. Shamoto, S. Filimonov, M. Suemitsu
  • Organizer: 36^<th> Korean Vacuum Society meeting
  • Place of Presentation: Seoul
  • Year and Date: 2009-02-11
• [Presentation] 光電子分光と基板曲率測定によるSi(110)初期酸化過程の評価 (2009)
  • Author(s): 山本喜久,鈴木康,宮本優,ローランド・バンタクロー,末光眞希,遠田義晴,寺岡有殿,吉越章隆,朝岡秀人,山崎竜也
  • Organizer: 応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会
  • Place of Presentation: 静岡
  • Year and Date: 2009-01-23
• [Presentation] Direct determination of surface stress during Bi-mediated Ge growth on Si (2008)
  • Author(s): H. Asaoka, T. Yamazaki, S. Shamoto, S. N. Filimonov
  • Organizer: 14th International Conference on Thin Films & Reactive Sputter Deposition 2008(ICTF14 & RSD2008)
  • Place of Presentation: Ghent(Belgium)
  • Year and Date: 2008-11-20
• [Presentation] Stress evolution during hetero-epitaxial growth of Ge on Si (2008)
  • Author(s): H. Asaoka
  • Organizer: Forschungszentrum Julich Seminar
  • Year and Date: 2008-11-14
• [Presentation] Si(110)初期酸化時の化学結合状態および基板曲率のリアルタイム計測 (2008)
  • Author(s): 山本喜久,鈴木康,宮本優,ローランド・バンタクロー,末光眞希,遠田義晴、寺岡有殿,吉越章隆,朝岡秀人,山崎竜也
  • Organizer: 第63回応用物理学会東北支部学術講演会
  • Place of Presentation: 宮城
  • Year and Date: 2008-11-05
• [Presentation] Stress evolution during surfactant-mediated growth of Ge on Si (2008)
  • Author(s): H. Asaoka
  • Organizer: 5th Japan-Korea Symposium on Surface Nanostructures
  • Place of Presentation: Miyagi
  • Year and Date: 2008-09-18
• [Presentation] BiサーファクタントGe成長過程のストレス・RHEEDその場観察 (2008)
  • Author(s): 朝岡秀人、山崎竜也、社本真一、S. N. Filimonov、末光眞希
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 名古屋
  • Year and Date: 2008-09-03
• [Book] Direct determination of surface stress during Bi-mediated Ge growth on Si (2008)
  • Author(s): H. Asaoka, T. Yamazaki, S. N. Filimonov, S. Shamoto
  • Total Pages: 179-182
• [Patent(Industrial Property Rights)] 非固定式通電加熱ホルダー (2011)
  • Inventor(s): 山崎竜也,朝岡秀人
  • Industrial Property Rights Holder: 独立行政法人日本原子力研究開発機構
  • Industrial Property Number: 特許権、特願2011-196724
  • Filing Date: 2011-09-09
• [Patent(Industrial Property Rights)] Si(110)表面の一次元ナノ構造及びその製造方法 (2008)
  • Inventor(s): 山田洋一,朝岡秀人,山本博之,社本真一
  • Industrial Property Rights Holder: 独立行政法人日本原子力研究開発機構
  • Industrial Property Number: 特許権、特願2008-182426
  • Filing Date: 2008-07-14