2011 Fiscal Year Final Research Report
The interface electronic structure between organic semiconductor and ferromagnetic metal surfaces : Towards organic spin-devices
| Project/Area Number |
20550015
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Physical chemistry
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| Research Institution | Kyoto University |
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Principal Investigator |
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| Project Period (FY) |
2008 – 2011
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| Keywords | 有機半導体 / 有機・金属界面 / 電子構造 / 角度分解X線光電子分光法 / 多変量解析 / 表面電気二重層 / 分子性固体 / 分極エネルギー |
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| Research Abstract |
Interface electronic structures between organic semiconductor and metal surface have been studied using photoemission spectroscopy. In the course of the study, we have developed a novel analytical method that can examine the core energy levels of material as a function of depth. Using this new method, electronic structures of buried metal-organic interfaces are examined. Further, the method allow for the first time to quantitatively determine the energy level difference between the bulk and surface of organic solids to be about 0. 3 eV. The origins of the difference are also discussed.
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