2010 Fiscal Year Final Research Report
Study on the suppression mechanism of crystal defects by the doping of the impurities in the melt during the crystal growth
| Project/Area Number |
20550173
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic industrial materials
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| Research Institution | University of Yamanashi |
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Principal Investigator |
WATAUCHI Satoshi University of Yamanashi, 大学院・医学工学総合研究部, 准教授 (30293442)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 結晶・多結晶材料 |
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| Research Abstract |
I started this project to clarify the mechanism of the unique impurity doping effects on the crystal growth of rutile. Following results were clarified by the careful characterization of the crystal defects. The impurity elements doped in the melts were detected in the grown crystals at the level of ppm. The etch pit density (EPD) was high at the periphery of the grown crystal and low at the center. The order of EPD was reduced by the impurity doping from ～10^5/cm^2 to ～10^4/cm^2. The EPD was also significantly affected by the solid-liquid interface shape during the crystal growth.
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Research Products
(9 results)
