2010 Fiscal Year Final Research Report
Elucidation of charge transfer at the interface between semiconductor and insulator and mechanism of defect formation
| Project/Area Number |
20560025
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Thin film/Surface and interfacial physical properties
|
|---|
| Research Institution | Musashi Institute of Technology |
|---|
Principal Investigator |
MARUIZUMI Takuya Musashi Institute of Technology, 工学部, 教授 (00398893)
|
|---|
| Project Period (FY) |
2008 – 2010
|
| Keywords | 界面 / 材料シミュレーション |
|---|
| Research Abstract |
Native defects existing in the three constituent regions of MOS (Metal Oxide Semiconductor) device, gate insulator, silicon substrate, and their interface, were examined with a first-principles method in order to elucidate their atomistic properties concerned with reliability issues of MOS devices. A Pb center defect in a Si/SiO_2 interface, B_<12> cluster in a Si substrate, oxygen vacancy and hafnium vacancy in HfO_2 were practically investigated and their fundamental characteristics were revealed in detail.
|
