2010 Fiscal Year Final Research Report
Shape formation in silicon surface by transfer photo-etching using solid phase reaction at fluorination agent-silicon interface.
Project/Area Number |
20560107
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Production engineering/Processing studies
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Research Institution | Osaka University |
Principal Investigator |
UCHIKOSHI Junichi Osaka University, 工学研究科, 助教 (90273581)
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Co-Investigator(Kenkyū-buntansha) |
MORITA Mizuho 大阪大学, 工学研究科, 教授 (50157905)
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Project Period (FY) |
2008 – 2010
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Keywords | フッ素化剤 / N-フルオロピリジニウム塩 / 光エッチング / 光転写 / シリコン / 3次元形状 / 半導体表面 / 形状創成 |
Research Abstract |
A new photo-etching method with N-fluoropyridinium salts is proposed in this study. Si is etched by applying N-fluoropyridinium salts to its surface and exposing the surface to light. The etched surface using liquid N-fluoropyridinium salts is smoother than that using solid N-fluoropyridinium salts. The etching depth increases with exposure time. H-terminated hydrophobic Si is easier to etch than OH-terminated hydrophilic Si. SiF_4 is produced by photo-etching. The number of processes in the new photo-etching method is fewer than that in the lithography and etching. The etching depth increases with light intensity. A ditch with different depths and a spherical surface are formed by exposing to light with different intensities at a time. It is expected to form arbitrary three-dimensional shape in a silicon surface by controlling light intensity distribution.
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Research Products
(12 results)
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[Presentation] Surface Shape Measurements of Silicon Photo-etched with N-fluoropyridinium salts by Near-infrared Transmission Interferometry2009
Author(s)
Junichi Uchikoshi, Noritaka Ajari, Kentaro Tsukamoto, Shigeharu Goto, Takabumi Nagai, Kenji Adachi, Kenta Arima, Mizuho Morita
Organizer
Extended Abstracts of International Workshop on X-ray Mirror Design, Fabrication, and Metrology
Place of Presentation
Suita, Osaka, Japan
Year and Date
2009-09-22
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