2010 Fiscal Year Final Research Report
Investigation of deposition process and electrical chracteristics of oxy-nitride dielectrics by using ECR sputtering
| Project/Area Number |
20560287
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hirosaki University |
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Principal Investigator |
TOSHIRO Ono Hirosaki University, 大学院・理工学研究科, 教授 (30374812)
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| Co-Investigator(Kenkyū-buntansha) |
TOYOTA Hiroshi 弘前大学, 大学院・理工学研究科, 助教 (90400126)
FUKUDA Yukio 諏訪東京理科大学, システム工学部, 教授 (50367546)
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| Project Period (FY) |
2008 – 2010
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| Keywords | 作成・評価技術 / MIS / 低温形成 / ECRプラズマ |
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| Research Abstract |
For high feature semiconductor devices, low temperature process technology for high quality MIS have been investigated by using ECR (electron cyclotron resonance plasma) sputtering. On Si-MIS, CV characteristics almost same as ideal one have been obtained for as-deposited MIS without post-deposition anneal by controlling the ion energy during ECR sputtering of dielectrics. On Ge-MIS, low midgap interface state density of 4.5x1010cm-2・eV-1 has been realized by room-temperature dielectric formation.
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