2010 Fiscal Year Final Research Report
Fundamental study for charge-density-wave soliton devices
Project/Area Number |
20560313
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
|
Research Institution | Hokkaido University |
Principal Investigator |
INAGAKI Katsuhiko Hokkaido University, 大学院・工学研究院, 助教 (60301933)
|
Project Period (FY) |
2008 – 2010
|
Keywords | 電荷密度波 / ソリトン / 電子デバイス |
Research Abstract |
Fundamental study for charge-density-wave devices which exploit macroscopic quantum states was conducted. Experiments were performed on non-local transport phenomena of bulk samples and fabrication technique of nanocrystal electrodes. A new type of non-local transport phenomenon was found in the charge-density-wave state of quasi-one-dimensional conductor o-TaS3. This is explained in terms of motion of topological defects.
|
-
-
-
-
-
-
[Presentation] Commensurate-incommensurate transitionof charge density waves in o-TaS32008
Author(s)
K.Inagaki, M.Tsubota, K.Ichimura, S.Tanda, K.Yamamoto, N.Hanasaki, Y.Nogami, N.Ikeda, T.Ito, H.Toyokawa.
Organizer
International workshop on electronic crystals 2008
Place of Presentation
Institut d'Etudes Scientifiques de Cargese, Cargese, France
Year and Date
2008-08-26
-