2010 Fiscal Year Final Research Report
Fabrication and evaluation of integrated magnetic thin film devices for microwave applications
| Project/Area Number |
20560321
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Shinshu University |
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Principal Investigator |
SATO Toshiro Shinshu University, 工学部, 教授 (50283239)
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| Co-Investigator(Renkei-kenkyūsha) |
SONEHARA Makoto 信州大学, 工学部, 助教 (30456496)
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| Research Collaborator |
IKEDA Kenji 太陽誘電株式会社, 研究開発センター, 主任
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| Project Period (FY) |
2008 – 2010
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| Keywords | 電子デバイス / 集積回路 / 磁性薄膜 / 高周波IC / 無線回路 |
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| Research Abstract |
Microwave magnetic thin film devices, embedded in chip size package RF-IC for the 4th generation cell phone, have been fabricated and evaluated. Through the development of high-frequency magnetic materials and their device-application, the improvement schemes for device properties was established, and it was found that the introduction of magnetic material to IC-package is effective for suppressing local induced noise. In addition, basic investigation on the novel tunable inductor and the power inductor for integrated power supply for RF-ICs has also been done. Their new schemes will be effective as the fundamental techniques of the next generation RF-ICs.
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