2010 Fiscal Year Final Research Report

Fabrication of thin-film hydrogen sensors operating at room temperature by photochemical deposition and photochemical doping

Research Project

Project/Area Number	20560323
Research Category	Grant-in-Aid for Scientific Research (C)
Allocation Type	Single-year Grants
Section	一般
Research Field	Electron device/Electronic equipment
Research Institution	Nagoya Institute of Technology
Principal Investigator	ICHIMURA Masaya Nagoya Institute of Technology, 工学研究科, 教授 (30203110)
Project Period (FY)	2008 – 2010
Keywords	水素センサー / 光化学堆積 / 酸化スズ
Research Abstract	We fabricated highly sensitive room temperature hydrogen sensors based on SnO_2 films. The films were deposited by the photochemical deposition. The deposition solution contained 10mM of SnSO_4 (pH around 1.4). The solution dropped on the substrate was irradiated with the light. The sample annealed at 200℃ showed current increase by a factor>10^3 within 1 min for 5000 ppm hydrogen at room temperature. The sensitivity and response speed were further improved by UV irradiation using a low-pressure Hg lamp both in vacuum and in air.

(4 results)