Indistinguishable photon generation by localized polarization in semiconductors using a local field effect

2022 Fiscal Year Final Research Report

• Project/Area Number: 20H01831
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related
• Research Institution: Kitasato University
• Principal Investigator: Mitsumori Yasuyoshi 北里大学, 理学部, 教授 (70375153)
• Co-Investigator(Kenkyū-buntansha): 赤羽 浩一 国立研究開発法人情報通信研究機構, ネットワーク研究所, 副ラボ長 (50359072)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: 半導体量子ドット / 光子 / 局在電子分極

Outline of Final Research Achievements

Recently, indistinguishable photon generation using a semiconductor exciton localized to an impurity center and a quantum dot has required microfabrications and difficult spectroscopy techniques to tune the generated photon to the same wavelength. In this research project, we proposed a simple way to tune the resonant energy of each localized exciton by controlling the excitation laser light intensity through a local field effect. We also observed the resonant energy shift by measuring the dependence of the photon echo spectrum on the excitation intensity in exciton systems localized to impurity centers in a GaAs film.

Free Research Field

半導体光物性

Academic Significance and Societal Importance of the Research Achievements

本研究で開発した半導体量子ドットや不純物中心に局在する励起子などの局在電子分極の共鳴エネルギーの精密制御法は、励起光強度を操作するだけで制御が可能なため、微細加工や高度な分光技術が必要な先行研究の共鳴エネルギー制御法に比較し、はるかに簡便な方法である。このため、本研究で開発した方法は将来的に光子で量子計算、量子情報処理を行う際に必要となる不可識別光子の物理的性質の同一性を高める上で非常に重要な要素技術になると期待される。