Spin-dependent electron transport through Si-based magnetic tunnel junctions

2022 Fiscal Year Final Research Report

• Project/Area Number: 20H02199
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: The University of Tokyo
• Principal Investigator: Nakane Ryosho 東京大学, 大学院工学系研究科(工学部), 特任准教授 (50422332)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: 電子デバイス / 電子スピン伝導物理

Outline of Final Research Achievements

This project studied physics on spin-dependent electron transport via Si-based magnetic tunnel junctions as well as via Si inversion channels. Original theories were establised and used for the analyses of experimental spin-transport signals. The detailed analyses clarified physics that is very useful knowledge for high-performance Si-based spin transistors.

Free Research Field

スピントロニクス

Academic Significance and Societal Importance of the Research Achievements

次世代IoT社会の実現に極めて有用なデバイス「シリコンベーススピントランジスタ」を実用に近づけるために重要な知見を多数明らかとした。また、オリジナルな物理モデルを確立して電子スピン伝導物理の詳細を定量的に解明した。この学術の深化は、該当研究分野の進展に大きく貢献することが期待できる。