2021 Fiscal Year Annual Research Report
Development of thermal transistor using transition metal oxide
| Project/Area Number |
20J14755
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| Research Institution | Hokkaido University |
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Principal Investigator |
KIM GOWOON 北海道大学, 情報科学研究科, 特別研究員(DC2)
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| Project Period (FY) |
2020-04-24 – 2022-03-31
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| Keywords | Tungsten oxide / Thermal conductivity / Electrical conductivity / Oxygen deficiency / Atomic defect tunnel / Epitaxial film / thermopower |
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| Outline of Annual Research Achievements |
In this research, I introduced oxygen concentration by electrochemical redox treatment and controlled the electrical, optical, structural properties.
The electrical conductivity was controlled from ~400 S cm－1 to an insulator, and the optical transmission at 1.5μm in wavelength was controlled in the range of 35 － 70%. This result would be useful for developing metal oxide epitaxial film-based electrochemical optoelectronic devices. [1, 2]
[1] G. Kim* et al., ACS. Appl. Electron. Mater. 3, 3619-3624 (2021)
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| Research Progress Status |
令和3年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
令和3年度が最終年度であるため、記入しない。
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