2023 Fiscal Year Final Research Report
Creation of Ge quantum structure on porous glass and its applications to optoelectronic integrated devices
Project/Area Number |
20K21009
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Research Category |
Grant-in-Aid for Challenging Research (Exploratory)
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Allocation Type | Multi-year Fund |
Review Section |
Medium-sized Section 21:Electrical and electronic engineering and related fields
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Research Institution | Tokyo City University |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
藤間 卓也 東京都市大学, 理工学部, 教授 (40392097)
藤田 博之 東京都市大学, 付置研究所, 特別教授 (90134642)
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Project Period (FY) |
2020-07-30 – 2024-03-31
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Keywords | ゲルマニウム / ガラス / 発光デバイス / マイクロブリッジ / ナノドット |
Outline of Final Research Achievements |
We aimed establishments of technologies for formation of high quality semiconductor nano structures on nano porous glass substrates as novel technologies toward realization of IoT devices on transparent glass substrates. Particularly, we focused on Germanium as a material that has been attracting attentions for next-generation semiconductor devices, and we aimed creation of Ge nanodots on the glass substrate and their applications to light emitting devices. As results, we demonstrated that the Ge nanodots can be formed in the nano holes in the glass and obtained strong room-temperature light emission (PL). Furthermore, we applied the Ge nanodot structures to micro bridge fabrication and wafer bonding processes, demonstrating high potentialities of the Ge nanodots toward optoelectronic integrated device applications.
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Free Research Field |
半導体工学
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Academic Significance and Societal Importance of the Research Achievements |
今日の高度情報化社会において、多種多様なIoTデバイスの開発が重要になっており、ガラスやフレキシブル基板上の低消費電力で低コストな半導体デバイスの実現が求められており、本成果はその基盤となる技術に繋がる。すなわち、車や建物、カメラやディスプレイなどを中心に、高機能な超小型センサー、小型チップを形成する技術に繋がる。学術的には、ナノ多孔構造を有するガラス界面における半導体結晶のナノ構造成長についての知見が初めて得られ、今後のナノ粒子、ナノドット等を基盤とした新しいナノ科学分野の開拓に繋がる。
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