2013 Fiscal Year Final Research Report
Defect Engineering in SiC and Application to Robust Devices with Ultrahigh Blocking Voltage
| Project/Area Number |
21226008
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| Research Category |
Grant-in-Aid for Scientific Research (S)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyoto University |
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Principal Investigator |
KIMOTO Tsunenobu 京都大学, 工学(系)研究科(研究院), 教授 (80225078)
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| Co-Investigator(Kenkyū-buntansha) |
SUDA Jun 京都大学, 大学院工学研究科, 准教授 (00293887)
NISHI Yusuke 京都大学, 大学院工学研究科, 助教 (10512759)
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| Project Period (FY) |
2009-05-11 – 2014-03-31
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| Keywords | 半導体 / パワーデバイス / 結晶欠陥 / キャリア寿命 / 絶縁破壊 |
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| Research Abstract |
Defect electronics in SiC and ultrahigh-voltage SiC power devices have been studied toward efficient electric power conversion employed for future smart grids. Fast epitaxy of high-purity SiC was developed, and extended defects in SiC epitaxial layers were systematically characterized. Physical properties of the major deep levels were elucidated. The carrier-lifetime killer defects could be eliminated, leading to remarkably enhanced carrier lifetimes. Control of carrier lifetimes was also achieved. Original junction-termination structures were proposed to achieve ultrahigh blocking voltage with SiC, and breakdown mechanism of SiC devices was discussed. By utilizing thick, lightly-doped SiC epitaxial layers and the original device structures, ultrahigh-voltage (> 20 kV) PiN diodes and npn bipolar transistors were realized. The performance was significantly improved by enhancement of carrier lifetimes, and high-temperature operation of SiC devices was demonstrated.
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