Comprehensive Observation of Interface dipoles at Insulator Semiconductor Interface

2011 Fiscal Year Final Research Report

• Project/Area Number: 21246008
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: IWAI Hiroshi 東京工業大学, フロンティア研究機構, 教授 (40313358)
• Co-Investigator(Kenkyū-buntansha): KAKUSHIMA Kuniyuki 東京工業大学, 大学院・総合理工学研究科, 准教授 (50401568) ; AHMET Parhat 東京工業大学, フロンティア研究機構, 特任准教授 (00418675)
• Project Period (FY): 2009 – 2011
• Keywords: 高誘電体薄膜 / 半導体 / 界面ダイポール

Research Abstract

To elucidate the origin of interface dipoles presented at dielectric and semiconductor interface, flatband voltages of MOS capacitors with rare earth oxides have been characterized. A model to reproduce the thickness dependent flatband voltage shift has been proposed. The composition of Si atoms in oxides rarely affects the magnitude of interface dipole. Oxygen atom supply at the interface, either by rare earth oxide stacking or by process, can shift the flatband voltage, suggesting that the main origin of interface dipole is due to oxygen defect during silicate reaction.

Research Products

• [Journal Article] EOT of 0. 62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature (2012)
  • Author(s): T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
  • Journal Title: IEEE Trans. Electron Devices Volume: Vol.59 Pages: 269-276
  • Peer Reviewed
• [Journal Article] CovalentNature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal (2012)
  • Author(s): T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
  • Journal Title: IEEEElectron Dev. Lett Volume: Vol.33 Pages: 423-425
  • Peer Reviewed
• [Journal Article] Valence number transition and silicate formation of cerium oxide films onSi(100) (2012)
  • Author(s): M. Mamatrishat, M. Kouda, K. Kakushima, H. Nohira, P. Ahmet, Y. Kataoka, A. Nishiiyama, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai
  • Journal Title: Vacuum Volume: Vol.86 Pages: 1513-1516
  • Peer Reviewed
• [Journal Article] Properties of CeO_x/La_2O_3 gate dielectric and its effects on the MOS transistor characteristics (2012)
  • Author(s): H. Wong, B. L. Yang, K. Kakushima, P. Ahmet, H. Iwai
  • Journal Title: Vacuum Volume: Vol.86 Pages: 990-993
  • Peer Reviewed
• [Journal Article] Interface and electrical properties of Tm_2O_3 gate dielectrics for gate oxide scaling in MOS devices (2011)
  • Author(s): M. Kouda, T. Kawanago, P. Ahmet, K. Natori, T. Hattori, H. Iwai, K. Kakushima, A. Nishiyama, N. Sugii, K. Tsutsui
  • Journal Title: J. Vac. Sci. Technol. B Volume: Vol.29 Pages: 062202
  • Peer Reviewed
• [Journal Article] Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process (2011)
  • Author(s): T. Kawanago, Y. Lee, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
  • Journal Title: Solid-StateElectron Volume: Vol.68 Pages: 68-72
  • Peer Reviewed
• [Journal Article] Rareearth oxide capping effect on La_2O_3 gatedielectrics for equivalent oxidethickness scaling toward 0. 5 nm (2011)
  • Author(s): M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
  • Journal Title: Jpn. J. Appl. Phys Volume: Vol.50 Pages: 1-PA4
  • Peer Reviewed
• [Journal Article] Characterization of flatband voltage roll-off and roll-up behavior in La_2O_3/silicat gate dielectric (2010)
  • Author(s): K. Kakushima, T. Koyanagi, K. Tachi, J. Song, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
  • Journal Title: Solid-State Electron Volume: Vol54 Pages: 720-723
  • Peer Reviewed
• [Journal Article] Electrical Characteristics of Rare Earth(La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric (2010)
  • Author(s): K. Matano, K. Funamizu, M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai
  • Journal Title: ECSTrans Volume: Vol.27 Pages: 1120-1134
• [Journal Article] Crystallographic Orientation Dependent Electrical Characteristics of La_2O_3 MOS Capacitors (2009)
  • Author(s): H. Nakayama, K. Kakushima, P. Ahmet, E. Ikenaga, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
  • Journal Title: ECS Trans Volume: Vol.25 Pages: 339-345
• [Presentation] Ce酸化物/Si(100)界面におけるCeの価数とCeシリケート (2012)
  • Author(s): 幸田みゆき
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-17
• [Presentation] ランタン酸化膜を用いたhigh-k/Si直接接合 (2012)
  • Author(s): 角嶋邦之
  • Organizer: ゲートスタック研究会-材料・プロセス・評価の物理-
  • Place of Presentation: 静岡
  • Year and Date: 2012-01-20
• [Presentation] Metal insertedpoly-Si with high temperature annealing for achieving EOT of 0. 62 nm in La-silicate MOSFET (2011)
  • Author(s): T. Kawanago, et al
  • Organizer: European Solid-State Device Research Conference
  • Place of Presentation: Helsinki
  • Year and Date: 2011-09-12
• [Presentation] W/Tm_2O_3/n-Si構造キャパシタの電気特性におけるTm_2O_3膜厚依存性 (2011)
  • Author(s): 常石佳奈, 他
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-01
• [Presentation] Rare Earth Oxide Capping Effect on La_2O_3 Gate Dielectrics toward EOT of 0. 5 nm (2011)
  • Author(s): M. Kouda, et al
  • Organizer: International Workshop on Dielectric Thin Films for Future Electron Devices : Science and Technology
  • Place of Presentation: Tokyo
  • Year and Date: 2011-01-20
• [Presentation] Electrical Characteristics of La_2O_3 Gated MOS Capacitors with Different Wafer Orientation (2009)
  • Author(s): H. Nakayama, et al
  • Organizer: 216th ECS meeting
  • Place of Presentation: Vienna
  • Year and Date: 2009-10-04