2011 Fiscal Year Final Research Report
Doping of Functional Impurities in Silicon Nanocrystals and Nanowires for Novel Properties
| Project/Area Number |
21510112
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | University of Tsukuba |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
FUKADA Naoki 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 独立研究者 (90302207)
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| Project Period (FY) |
2009 – 2011
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| Keywords | Siナノワイヤ / Siナノ結晶 / 界面水素パッシベーション / 不純物ドーピング / 最大固溶度 / 酸化と偏析挙動 / 新物性 |
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| Research Abstract |
We have investigated 1)hydrogen (H) passivation of the interfaces of SiO2 and Si crystalline cores in SiNWs and SiNCs, and 2) novel properties for impurity-doped SiNWs and SiNCs. It was found in this study that donor and acceptor impurities with each maximum solubility can be doped in them and show the opposite segregation effects, and novel optical and magnetic properties are demonstrated in H-passivated samples.
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Research Products
(7 results)
