2011 Fiscal Year Final Research Report
Development of photo-excited dielectric relaxation method : selective and quantitative analyses of excitation and relaxation processes of photoactive sites.
| Project/Area Number |
21560037
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
ISHII Masashi 独立行政法人物質・材料研究機構, 表界面構造・物性ユニット, 主任研究員 (90281667)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 薄膜・表面界面物性(A)薄膜 |
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| Research Abstract |
Rare-earth doped semiconductors are one of topical materials for opto-electric devices. I proposed a new analytical technique of luminescence mechanisms of the materials by using an electronic technique, namely, photo excited dielectric relaxation(PEDR). An experimental setup for PEDR was developed. Selective and quantitative analyses of elementary processes for luminescence of Sm doped TiO2 were successfully realized with the setup. Moreover, charge dissipation processes that cause quenching were identified. Interface states of TiO2 microcrystals which induce luminescence and quenching were characterized.
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