2011 Fiscal Year Final Research Report
Surface passivation of GaN by graphene layers
| Project/Area Number |
21560352
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | University of Fukui |
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Principal Investigator |
SHIOJIMA Kenji 福井大学, 大学院・工学研究科, 准教授 (70432151)
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| Co-Investigator(Kenkyū-buntansha) |
HASHIMOTO Akihiro 福井大学, 大学院・工学研究科, 准教授 (10251985)
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| Project Period (FY) |
2009 – 2011
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| Keywords | グラフェン / 表面保護 / 電子デバイス / GaN |
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| Research Abstract |
We proposed a new technology for surface passivation of GaN by graphene layers, which have no dangling bonds on the surface, in order to improve electron device characteristics. Large area transfer of the graphene layers from SiC substrates on GaN was succeeded, and oxygen plasma etching process was established. We found Schottky barrier lowering by inserting the graphene layers into Ni/GaN interfaces.
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