2012 Fiscal Year Final Research Report
Control of spin properties at nitride-semiconductor interfaces
| Project/Area Number |
21710102
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Nanomaterials/Nanobioscience
|
|---|
| Research Institution | The University of Tokyo |
|---|
Principal Investigator |
GOHDA Yoshihiro 東京大学, 大学院・理学系研究科, 助教 (50506730)
|
|---|
| Project Period (FY) |
2009 – 2012
|
| Keywords | ナノ表面・界面 / ナノ材料 / 磁性 / 物性理論 |
|---|
| Research Abstract |
Theoretical investigations on magnetism based on first-principles calculations were conducted for interfaces between nitride-semiconductors such as GaN and non-magnetic materials. Prediction of interface ferromagnetism for AlN/MgB2 and its spin-transport properties were published in Physical Review Letters. In addition, findings on spin properties of GaN/graphene interfaces were disclosed in Applied Physics Letters.
|
