擬似LPE法によるInN系窒化物混晶半導体MBE結晶成長技術の開拓

2010 Fiscal Year Annual Research Report

• Project/Area Number: 21760237
• Research Institution: Ritsumeikan University
• Principal Investigator: 山口 智広 立命館大学, 立命館グローバル・イノベーション研究機構, ポストドクトラルフェロー (50454517)
• Keywords: 半導体 / 薄膜・量子構造 / 作製・評価技術 / 分子線エピタキシー法 / 窒化物半導体 / 混晶

Research Abstract

本年度は、疑似LPE法として研究代表者等が提案しているDERI (Droplet Elimination by Radical-beam Irradiation)法について、様々なその場観察技術を用いることによりそのメカニズム解明を行うと共に、本InN成長手法をInGaN混晶成長やMgドープInN成長に応用させた。
疑似LPE法を用いてInGaN成長を行った場合、Gaが優先的に膜中に取り込まれ、Inが表面に析出される。昨年度は、この現象を有効に利用することにより簡便にInN/InGaN周期構造を自然形成できる技術を確立した。今年度は、上記現象をその場観察技術を用いて制御しながら成長することにより、単一組成のInGaN厚膜成長も可能であることを示した。
また、MgドープInN成長を同手法を用いて行った場合、Mgが優先的に膜中に取り込まれ、Inが表面に析出されることが明らかとなった。InGaN厚膜成長の技術をMgドープInN成長に応用させることにより、膜中にMgが均一にドープされたInN膜作製に成功した。このMgドープInNのバルク領域は再現性良くp型伝導特性を示した。
このように、疑似LPE法を用いたInGaN成長、MgドープInN成長の成長メカニズムの解明を通して、InN系光デバイス構造に必要となる作製基本技術(下地層に必要なInGaN厚膜、InN/InGaN周期構造、p型InN)を着実に得ている。

Research Products

• [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN (2011)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Pages: 01AE02(1-4)
  • Peer Reviewed
• [Journal Article] Mg doped InN and confirmation of free holes in InN (2011)
  • Author(s): K.Wang, N.Millar, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.AgerIII
  • Journal Title: Applied Physics Letters Volume: 98 Pages: 042104(1-3)
  • Peer Reviewed
• [Journal Article] RF-MBE growth of InN/InGaN MQW Structures by DERI and their characterization (2010)
  • Author(s): T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
  • Journal Title: Proceedings of 22nd International Conference on Indium Phosphide and Related Materials Pages: 92-95
• [Presentation] 電流-電圧特性の温度依存性評価によるp型InNの検証 (2011)
  • Author(s): 櫻井秀昭、井脇明日香、岩本亮輔、山口智広、城川潤二郎、荒木努、名西〓之
  • Organizer: 2011年(平成23年)春季第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学(神奈川県)
  • Year and Date: 2011-03-25
• [Presentation] N極性及びIn極性のInN-MIS構造の作製と評価 (2011)
  • Author(s): 森本健太、三木彰、山口智広、前田就彦、荒木努、名西〓之
  • Organizer: 2011年(平成23年)春季第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学(神奈川県)
  • Year and Date: 2011-03-25
• [Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method (2011)
  • Author(s): T.Araki, T.Sakamoto, R.Iwamto, T.Yamaguchi, E.Yoon, Y.Nanishi
  • Organizer: Third International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2011)
  • Place of Presentation: 名古屋工業大学(愛知県)
  • Year and Date: 2011-03-09
• [Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN (2011)
  • Author(s): T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: Third International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2011)
  • Place of Presentation: 名古屋工業大学(愛知県)
  • Year and Date: 2011-03-07
• [Presentation] Growth and fabrication of InN-based III-nitride structure using droplet elimination process by radical beam irradiation (2011)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Organizer: SPIE Photonic West 2011
  • Place of Presentation: San Francisco, USA(招待講演)
  • Year and Date: 2011-01-25
• [Presentation] 窒化物半導体光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価 (2010)
  • Author(s): 名西〓之、山口智広、王科、荒木努、E.Yoon
  • Organizer: 応用物理学会九州支部学術講演会
  • Place of Presentation: 九州大学(福岡県)(招待講演)
  • Year and Date: 2010-11-27
• [Presentation] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure (2010)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Organizer: 2010 International Coference on Solid State Devices and Materials (SSDM2010)
  • Place of Presentation: 東京大学(東京都)(招待講演)
  • Year and Date: 2010-09-24
• [Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy (2010)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Florida, USA
  • Year and Date: 2010-09-23
• [Presentation] Wet Etching Process for InN Device Fabrication (2010)
  • Author(s): A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Florida, USA
  • Year and Date: 2010-09-22
• [Presentation] Mg Doped InN and Search For Holes (2010)
  • Author(s): K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.AgerIII, K.M.Yu, W.Walukiewicz
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Florida, USA
  • Year and Date: 2010-09-22
• [Presentation] Growth of InN and related alloys using droplet elimination by radical beam irradiation (2010)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.AgerIII, K.M.Yu, W.Walukiewicz
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Florida, USA(招待講演)
  • Year and Date: 2010-09-21
• [Presentation] DERI法InGaN成長を用いた厚膜化への試み (2010)
  • Author(s): 上松尚、山口智広、岩本亮輔、坂本務、藤嶌辰也、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-14
• [Presentation] DERI法を用いたInGaN成長と組成制御への試み (2010)
  • Author(s): 岩本亮輔、山口智広、上松尚、坂本務、藤嶌辰也、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-14
• [Presentation] TEMを用いたDERI法ドープInNの極微構造評価 (2010)
  • Author(s): 坂本務、山口智広、岩本亮輔、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-14
• [Presentation] InNデバイス作製プロセスへのウエットエッチングの適用 (2010)
  • Author(s): 三木彰、森本健太、前田就彦、山口智広、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-14
• [Presentation] InGaN growth using droplet elimination by radical-beam irradiation method (2010)
  • Author(s): T.Yamaguchi, K.Wang, T.Araki, E.Yoon, N.Yasushi
  • Organizer: 16th International Conference on Molecular Beam Epitaxy (MBE2010)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2010-08-19
• [Presentation] Various application of DERI (droplet elimination by radical-beam irradiation) method in growth of RF-MBE (2010)
  • Author(s): T.Yamaguchi, H.Umeda, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS-29)
  • Place of Presentation: ラフォーレ琵琶湖(滋賀県)
  • Year and Date: 2010-07-14
• [Presentation] Wet etching by KOH for InN device fabrication (2010)
  • Author(s): A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS-29)
  • Place of Presentation: ラフォーレ琵琶湖(滋賀県)
  • Year and Date: 2010-07-14
• [Presentation] Characterization of contact resistance of Ti/Al/Ti/Au ohmic metal on N-polar and In-polar InN films grown by RF-MBE (2010)
  • Author(s): K.Morimoto, S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS-29)
  • Place of Presentation: ラフォーレ琵琶湖(滋賀県)
  • Year and Date: 2010-07-14
• [Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE (2010)
  • Author(s): T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: Third International Symposium on Growth of III-Nitrides (ISGN-3)
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-05
• [Presentation] Evidence of Free Holes in Mg Doped InN (2010)
  • Author(s): K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
  • Organizer: Third International Symposium on Growth of III-Nitrides (ISGN-3)
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-05
• [Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization (2010)
  • Author(s): T.Araki, H.Umeda, T Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
  • Organizer: 22th Indium Phosphide and Related Materials Conference (IPRM2010)
  • Place of Presentation: 高松シンボルタワー(香川県)
  • Year and Date: 2010-06-01
• [Presentation] Growth, monitoring and InN/InGaN MQW structure fabrication by DERI method (2010)
  • Author(s): Y.Nanishi, T.Yamaguchi
  • Organizer: IX International Conference of Polish Society for Crystal Growth
  • Place of Presentation: Gdansk-Sobieszewo, Poland(招待講演)
  • Year and Date: 2010-05-24
• [Presentation] Undoped and Mg-doped InN grown using droplet elimination by radical-beam irradiation method (2010)
  • Author(s): T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
  • Organizer: The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
  • Place of Presentation: Peking, China
  • Year and Date: 2010-05-18
• [Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用 (2010)
  • Author(s): 山口智広、荒木努、名西〓之
  • Organizer: 第2回窒化物半導体結晶成長講演会(プレISGN-3)
  • Place of Presentation: 三重大学(三重県)(招待講演)
  • Year and Date: 2010-05-14
• [Presentation] DERI法のRHEED強度その場観察手法を用いたラジカルセル診断 (2010)
  • Author(s): 勝木拓郎、福本英太、山口智広、荒木努、名西〓之
  • Organizer: 第2回窒化物半導体結晶成長講演会(プレISGN-3)
  • Place of Presentation: 三重大学(三重県)
  • Year and Date: 2010-05-14
• [Remarks]
  • URL: http://www.ritsumei.ac.jp/se/re/nanishilab/Nanishi-Lab.html