2011 Fiscal Year Final Research Report
Development of MBE growth technology of InN-based alloys using quasi-LPE method
| Project/Area Number |
21760237
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kogakuin University (2011)
Ritsumeikan University (2009-2010) |
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Principal Investigator |
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| Project Period (FY) |
2009 – 2011
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| Keywords | 半導体 / 分子線エピタキシー / 薄膜・量子構造 / 製作・評価技術 / 窒化物半導体 / 混晶 |
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| Research Abstract |
The quasi-LPE(Liquid Phase Epitaxy) method, which has been proposed as a new MBE(Molecular Beam Epitaxy) growth of InN, was applied to the growth of InGaN. By controlling the phase separation occurred during the growth of InGaN, simple and reproducible growth of In(Ga) N/InGaN periodic structure and thick InGaN film was realized. This method was also developed to the growth of Mg-doping technique in order to obtain p-type materials.
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