2010 Fiscal Year Final Research Report
High performance III-V MOSFETs using MOVPE selectively regrown source
| Project/Area Number |
21760253
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
KANAZAWA Toru Tokyo Institute of Technology, 大学院・理工学研究科, 助教 (40514922)
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| Project Period (FY) |
2009 – 2010
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| Keywords | MOSFET / 高移動度チャネル / III-V族半導体 / MOVPE |
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| Research Abstract |
III-V high mobility channels are a promising technology for future logic applications. To enhance the current injection and reduce the series resistance, heavily doped source/drain structures were formed by MOVPE regrowth. The maximum drain current of 1.3 A/mm and transconductance of 0.8 S/mm were obtained for the regrown souce/drain MOSFET with the channel length of 170 nm. The results show that regrown source is an effective way to improve the drain current of III-V MOSFETs.
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