2023 Fiscal Year Final Research Report
Study on heterogeneous integration technology for high power power IC
| Project/Area Number |
21H01314
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Review Section |
Basic Section 21010:Power engineering-related
|
|---|
| Research Institution | Kyushu Institute of Technology |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
小金丸 正明 鹿児島大学, 理工学域工学系, 准教授 (20416506)
新海 聡子 九州工業大学, 大学院情報工学研究院, 准教授 (90374785)
|
|---|
| Project Period (FY) |
2021-04-01 – 2024-03-31
|
| Keywords | 3D パワーIC / 3DIC / ヘテロジニアスインテグレーション / GaNパワーデバイス |
|---|
| Outline of Final Research Achievements |
We have developed the wafer bonding technology of GaN/Si(111) substrate and Si(100) substrate (assuming Si-CMOS is mounted), the removal technology of Si(111) substrate and Buffer layer to realize heterogeneous integration of GaN power devices and Si-CMOS, . We have also developed the technology for making a Through Semiconductor VIA. The strain and stress fields at the GaN/AlGaN heterojunction interface were evaluated by (1) Raman spectroscopy, (2) finite element thermal stress analysis, and (3) application of the sampling Moire method to TEM images. From the evaluation results, it was found that a compressive stress of 8.4 GPa was generated on the GaN side of the GaN/AlGaN interface.
|
| Free Research Field |
パワーエレクトロニクス
|
| Academic Significance and Societal Importance of the Research Achievements |
GaNパワーデバイスとSi-CMOSをヘテロジニアスインテグレーションする技術を実現するとともに、実現した基板の応力を解析することにより３次元パワーIC実現に向けての基盤技術を確立した。提案した技術を採用することにより、高効率で小型の電源が実現でき、カーボンニュートラル2050に貢献できる。
|
