Realization of graphene TFT with high mobility and high on/off ratio using NiCO3/graphene hetero -junction

2023 Fiscal Year Final Research Report

• Project/Area Number: 21K04163
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Matsue National College of Technology
• Principal Investigator: ICHIKAWA KAZUNORI 松江工業高等専門学校, 電子制御工学科, 准教授 (90509936)
• Co-Investigator(Kenkyū-buntansha): 大島 多美子 佐世保工業高等専門学校, 電気電子工学科, 准教授 (00370049)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: グラフェン / 薄膜トランジスタ / ヘテロ接合

Outline of Final Research Achievements

We aimed to fabricate high-performance graphene thin-film transistors and conducted research under various synthesis conditions over a period of three years. As a result, the optimal conditions for fabricating the highest performance thin-film transistors were found to be a nickel film thickness of 200 nm, synthesis temperature of 900°C, acetylene introduction time of 50 seconds as the carbon source, and using nitrogen gas as the dilution gas, which improved the ON/OFF ratio compared to previous methods. Among these, it was newly discovered that changing the dilution gas from argon to nitrogen significantly enhances the quality of the graphene film. It has become evident that substantial performance improvements can be expected by using various dilution gases in the future."

Free Research Field

半導体デバイス

Academic Significance and Societal Importance of the Research Achievements

これまでグラフェンの薄膜トランジスタは, 二硫化モリブデンなどとのヘテロ接合により性能向上させてきたが、我々はグラフェン合成時にできるNiCO3とのヘテロ接合によりトランジスタのON/OFF比を向上させてきた. 今回の結果は結果的にON/OFF比を向上することができたことから、様々な半導体とのヘテロ接合の研究が進んでいくことで, グラフェンの薄膜トランジスタの実現が近づくと考えられる。