Fabrication of visible-light-transparent flexible IoT sensors using oxide semiconductors

2023 Fiscal Year Final Research Report

• Project/Area Number: 21K04696
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 26040:Structural materials and functional materials-related
• Research Institution: Tokyo University of Science
• Principal Investigator: Mutsumi Sugiyama 東京理科大学, 創域理工学部電気電子情報工学科, 教授 (40385521)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: NiO / 透明半導体 / フレキシブルデバイス / 酸化物半導体

Outline of Final Research Achievements

To realize "ultra-low-cost transparent flexible IoT sensors," transparent IoT devices such as CO2 sensors and transparent solar cells made from wide-bandgap oxide semiconductors were fabricated. Concurrently, investigation was carried out into the degradation and suppression properties of the semiconductors, including defects specific to flexible devices and degradation during long-term use. Wide-bandgap oxide semiconductors, which are harmless and inexpensive functional materials, were utilized, and the use of sputtering and electrostatic spray deposition methods suitable for inexpensive large-area deposition was proposed to achieve easily usable low-cost IoT devices.

Free Research Field

半導体デバイス

Academic Significance and Societal Importance of the Research Achievements

本研究は、機能材料である酸化物半導体を用いた「超安価な透明フレキブルIoTデバイス」を半導体材料からデバイス構造まで一貫して提案するものである。透明でフレキシブルな太陽電池・各種センサ・トランジスタを組み合わせたモノリシックデバイスが活躍できる場は限りない。本課題は、学術的・理学的にフレキシブル酸化物半導体の欠陥物性を明らかにすることで、欠陥抑制・デバイス長寿命化に貢献するとともに、工学的に透明・フレキシブル・外部電源不要なデバイスを提案するものであるため、農業・衣料・防犯・福祉など、その応用展開・社会への波及効果も広い。