2023 Fiscal Year Final Research Report
Honeycomb nitrides layers as playground for Xenes formation
| Project/Area Number |
21K04883
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 29020:Thin film/surface and interfacial physical properties-related
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Project Period (FY) |
2021-04-01 – 2024-03-31
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| Keywords | 2D materials / semiconductors / spin-polarization / Dirac materials / Xenes / Silicon carbide |
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| Outline of Final Research Achievements |
A single silicon nitride layer on SiC(0001) with honeycomb dangling bonds arrangement has been successfully grown and characterized by variety of surface science techniques. This nitride layer is an interesting material itself promising a lot of future applied and scientific potential. We have also carried out extensive computational study of possibility of honeycomb lattice 2D layers consisting of Sn, Sb, Pb, and Bi atoms (Xenes). Calculations confirms high probability to synthesize such layers on nitride buffer, confirming suggested significant prospects of such approach. The Xene layers made of heavy elements exhibit unique spin-polarized electronic structure. Experiments will be done in future continuing the progress achieved during this project period.
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| Free Research Field |
Surface physics
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| Academic Significance and Societal Importance of the Research Achievements |
The data obtained in during this research period has proven the concept of using nitride layer on SiC as a base for development of group IV and V Xene 2D materials. Further developments of the topic are expected in the future which may prove useful in the field of spintronics.
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