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2013 Fiscal Year Final Research Report

Design of Electronic Properties and Development of High-Mobility Channel Technology for Low Power/High-Speed Nano-CMOS Devices

Research Project

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Project/Area Number 22000011
Research Category

Grant-in-Aid for Specially Promoted Research

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Engineering
Research InstitutionNagoya University

Principal Investigator

ZAIMA Shigeaki  名古屋大学, 工学研究科, 教授 (70158947)

Co-Investigator(Kenkyū-buntansha) TAKENAKA Mitsuru   (20451792)
SAKASHITA Mitsuo   (30225792)
TANAKA Nobuo   (40126876)
TAKEUCHI Wakana   (90569386)
Co-Investigator(Renkei-kenkyūsha) NAKATSUKA Osamu   (20334998)
TAKAGI Shinichi   (30372402)
Project Period (FY) 2010 – 2013
Keywordsゲルマニウム / 錫 / 歪 / エピタキシャル成長 / CMOS / 表面・界面
Research Abstract

We have investigated the crystal growth and electronic properties of strained Ge and GeSn epitaxial layers for realizing low power and high speed CMOS devices. We achieved the growth of very high Sn content GeSn growth and the reduction of defect density in GeSn epitaxial layers by substrate design, low temperature growth, and strain engineering. We also developed engineering technology of point defects, carrier properties, and MOS interface for GeSn materials. In addition, we demonstrated the fabrication of GOI and SGOI wafers and the improvement on the carrier mobility in those layers.

  • Research Products

    (26 results)

All 2014 2013 2012 2011 2010 Other

All Journal Article (10 results) (of which Peer Reviewed: 10 results) Presentation (10 results) Book (1 results) Remarks (4 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Importance of Control of Oxidant Partial Pressure on Structural and Electrical Properties of Pr-oxide Films2014

    • Author(s)
      K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
    • Journal Title

      Thin Solid Films

      Volume: 30 Pages: 276-281

    • DOI

      DOI:10.1016/j.tsf.2013.10.088

    • Peer Reviewed
  • [Journal Article] Impact of plasma postoxidation temperature on the electrical properties of Al_2O_3/GeO_x/Ge pMOSFETs and nMOSFETs2014

    • Author(s)
      R. Zhang, J.-C. Lin, X. Yu, M. Takenaka, and S. Takagi
    • Journal Title

      IEEE Trans. Electron Dev

      Volume: 61 Pages: 416-422

    • DOI

      DOI:10.1109/TED.2013.2295822

    • Peer Reviewed
  • [Journal Article] Development of epitaxial growth technology for Ge_<1-x>Sn_x alloy and study of its properties for Ge nanoelectronics2013

    • Author(s)
      O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka, and S. Zaima
    • Journal Title

      Solid-State Electron

      Volume: 83 Pages: 82-86

    • DOI

      DOI:10.1016/j.sse.2013.01.040

    • Peer Reviewed
  • [Journal Article] Technology Evolution for Silicon Nanoelectronics : Postscaling Technology2013

    • Author(s)
      S. Zaima
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 52 Pages: 030001

    • DOI

      DOI:10.7567/JJAP.52.030001

    • Peer Reviewed
  • [Journal Article] Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure2013

    • Author(s)
      S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
    • Journal Title

      Appl. Phys. Lett

      Volume: 103 Pages: 082114

    • DOI

      DOI:10.1063/1.4819127

    • Peer Reviewed
  • [Journal Article] Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications : Challenges and Opportunities2013

    • Author(s)
      O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima
    • Journal Title

      ECS Trans

      Volume: 58 Pages: 149-155

    • DOI

      DOI:10.1149/05809.0149ecst

    • Peer Reviewed
  • [Journal Article] Improvement of the precision of lattice parameter determination by nano-beam electron diffraction2013

    • Author(s)
      K. Saitoh, H. Nakahara, and N. Tanaka
    • Journal Title

      Microscopy

      Volume: 62 Pages: 533-539

    • DOI

      DOI:10.1093/jmicro/dft023

    • Peer Reviewed
  • [Journal Article] Growth of Ge_<1-x>Sn_x heteroepitaxial layers with very high Sn contents on InP(001) substrates2012

    • Author(s)
      M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima
    • Journal Title

      Thin Solid Films

      Volume: 520 Pages: 3201-3205

    • DOI

      DOI:10.1016/j.tsf.2011.10.153

    • Peer Reviewed
  • [Journal Article] Low temperature formation of Si_<1-x-y>Ge_xSn_y-on-insulator structures by using solid-phase mixing of Ge_<1-z>Sn_z/Si-on-insulator substrates2012

    • Author(s)
      O. Nakatsuka, K. Mochizuki, Y. Shimura, T. Yamaha, and S. Zaima
    • Journal Title

      Thin Solid Films

      Volume: 520 Pages: 3288-3292

    • DOI

      DOI:10.1016/j.tsf.2011.10.120

    • Peer Reviewed
  • [Journal Article] GeSn Technology : Impact of Sn on Ge CMOS Applications2011

    • Author(s)
      S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
    • Journal Title

      ECS Trans

      Volume: 41 Pages: 231-238

    • DOI

      DOI:10.1149/1.3633303

    • Peer Reviewed
  • [Presentation] Development of Ge_<1-x>Sn_x and Ge_<1-x-y>Si_xSn_y Thin Film Materials for Future Electronic Applications2013

    • Author(s)
      O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima
    • Organizer
      International Conference on THERMEC'2013
    • Place of Presentation
      Las Vegas, USA(招待講演)
    • Year and Date
      20131202-06
  • [Presentation] Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications : Challenges and Opportunities2013

    • Author(s)
      O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, S. Zaima
    • Organizer
      224th The Electrochemical Society (ECS) Meeting
    • Place of Presentation
      San Francisco, USA(招待講演)
    • Year and Date
      20131027-1101
  • [Presentation] MOS interface engineering for high-mobility Ge CMOS2013

    • Author(s)
      M. Takenaka, R. Zhang, S. Takagi
    • Organizer
      IEEE International Reliability Physics Symposium (IRPS'13)
    • Place of Presentation
      Monterey, USA(招待講演)
    • Year and Date
      2013-04-17
  • [Presentation] Growth and Optical Properties of Ge_<1-x>Sn_x Alloy Thin Films with a High Sn Content2012

    • Author(s)
      S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka
    • Organizer
      The PRiME 2012 Joint International (222nd) ECS Meeting
    • Place of Presentation
      Honolulu, USA(招待講演)
    • Year and Date
      20121008-12
  • [Presentation] Potential of GeSn Alloys for Application to Si Nanoelectronics2012

    • Author(s)
      S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, O. Nakatsuka
    • Organizer
      2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012)
    • Place of Presentation
      Naha, Japan(招待講演)
    • Year and Date
      20120627-29
  • [Presentation] Material properties and applications of Ge_<1-x>Sn_x alloys for Ge Nanoelectronics2012

    • Author(s)
      O. Nakatsuka, Y. Shimura, W. Takeuchi, and S. Zaima
    • Organizer
      The 6th International SiGe Technology and Device Meeting (ISTDM2012), No. 12.1
    • Place of Presentation
      Barkeley, USA(招待講演)
    • Year and Date
      20120604-06
  • [Presentation] Materials Innovation in Si Nanoelectronics2011

    • Author(s)
      S. Zaima and O. Nakatsuka
    • Organizer
      2011 Tsukuba Nanotechnology Symposium (TNS'11)
    • Place of Presentation
      Tsukuba, Japan(招待講演)
    • Year and Date
      20111215-17
  • [Presentation] GeSn Technology : Impact of Sn on Ge CMOS Applications2011

    • Author(s)
      S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
    • Organizer
      220th Electro Chemical Society Meeting
    • Place of Presentation
      Boston, USA(招待講演)
    • Year and Date
      20111009-14
  • [Presentation] Tensile-Strained Ge and Ge_<1-x.>Sn_x Layers for High-Mobility Channels in Future CMOS Devices2010

    • Author(s)
      S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi
    • Organizer
      International Conference on Solid-State and Integrated Circuit Technology
    • Place of Presentation
      Shanghai, China(招待講演)
    • Year and Date
      20101101-04
  • [Presentation] Assessment of Ge_<1-x>Sn_x Alloys for Strained Ge CMOS Devices2010

    • Author(s)
      S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, A. Sakai, and S. Zaima
    • Organizer
      218th ECS Meeting
    • Place of Presentation
      Las Vegas, USA(招待講演)
    • Year and Date
      20101010-15
  • [Book] ポストシリコン半導体-ナノ成膜ダイナミクスと基板・界面効果-2013

    • Author(s)
      財満鎭明、中塚理、高木信一(全執筆者57名)
    • Total Pages
      510(3-11,160-167)
    • Publisher
      株式会社エヌ・ティー・エヌ
  • [Remarks] 科学研究費・特別推進研究ウェブサイト

    • URL

      http://alice.xtal.nagoya-u.ac.jp/nano_cmos/index.html

  • [Remarks] 財満研究室ウェブサイト

    • URL

      http://alice.xtal.nagoya-u.ac.jp/zaimalab/

  • [Remarks] 財満鎭明,日本表面科学会・フェロー, 2011年5月23日.

  • [Remarks] 財満鎭明,第35回応用物理学会論文賞,解説論文『ポストスケーリング技術の現状と期待される新展開』,2013年9月16日.

  • [Patent(Industrial Property Rights)] 多層膜構造体及びその形成方法2011

    • Inventor(s)
      中塚理、財満鎭明、望月健太、志村洋介
    • Industrial Property Rights Holder
      国立大学法人名古屋大学
    • Industrial Property Number
      特許, 特許公開2012-244069
    • Filing Date
      2011-05-23

URL: 

Published: 2015-03-12  

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