2012 Fiscal Year Final Research Report
Electric Field Modulation of Giant Thermopower in Oxide Thin FilmTransistors and its Application for IR Sensor
| Project/Area Number |
22360271
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Hokkaido University (2012)
Nagoya University (2010-2011) |
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Principal Investigator |
OHTA Hiromichi 北海道大学, 電子科学研究所, 教授 (80372530)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 二次元電子ガス / 熱電能 / 電界変調 / 赤外線センサー |
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| Research Abstract |
Top-gate type thin film transistor structure was fabricated on an oxide semiconductor, SrTiO3 single crystal plate. The electron transport and the thermopower S for the extremely thin two-dimensional electron gas, which can be formed on the SrTiO3 crystal by a gate voltage application, were precisely measured / analyzed. As a result of this study, followings were clarified. 1) Water incorporated nano-porous glass [CAN: H. Ohta et al., Nature Commun. 1: 118 (2010); Adv. Mater. 24, 740 (2012)] is very useful as a gate insulator. 2) Extremely thin 2DEG can be generated on the oxide semiconductor surface when ECBM of the oxide semiconductor is greater than EH2. 3) Extremely thin 2DEG (n3D >4×1021 cm-3) exhibited unusually large S-value, which is five times larger than that of bulk (Figure of merit, ZT~2). This clearly demonstrates that the transistor approach works well as the thermoelectric infrared sensor.
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