2012 Fiscal Year Final Research Report
Nano-capacitor fabrication process development by using supercritical fluid
| Project/Area Number |
22360329
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Reaction engineering/Process system
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
MOMOSE Takeshi 東京大学, 大学院・工学系研究科, 助教 (10611163)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 超臨界流体 / 薄膜合成 / プロセス開発 / DRAM / FeRAM / 電極 / 高誘電体 / 強 誘電体 |
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| Research Abstract |
Process for nano-capacitors to be used in DRAMs and FeRAMs using supercritical CO2 (scCO2) was developed. Organic metal compounds were dissolved into scCO2 and reacted to form thin films on a heated substrate. This process, Supercritical Fluid Deposition, SCFD, was used to deposit Ru, Pt, and SrRuO3 as an electrode. TiO2, SrTiO3, and BiTiO3 were also deposited as a high-dielectric constant material and ferroelectric material. The developed processes showed excellent step coverage like as the conventional processes of CVD/ALD with lower deposition temperature.
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