2012 Fiscal Year Final Research Report
Surface atomic structure of compound semiconductors treated with active nitrogen species
| Project/Area Number |
22510117
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Nanomaterials/Nanobioscience
|
|---|
| Research Institution | National Institute for Materials Science |
|---|
Principal Investigator |
OHTAKE Akihiro 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主幹研究員 (30267398)
|
|---|
| Project Period (FY) |
2010 – 2012
|
| Keywords | ナノ表面・界面 / 化合物半導体 / 表面構造 |
|---|
| Research Abstract |
The initial nitridation processes of GaAs(001) have been systematically studied. The structure and composition of the nitrided surface strongly depends on the preparation condition. When the GaAs(001)-(2x4) surfaces were exposed to the active N species under the As4 flux, N atoms are initially incorporated into the As lattice site at the third atomic layer in the β2(2x4) structure. On the other hand, for the nitridation without the As4 flux, the N-induced (3x3) reconstructions are formed.
|
