2012 Fiscal Year Final Research Report
Development ofnovel heterostructure materials for high performance green-range semiconductor laser diodes
| Project/Area Number |
22560301
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Sophia University |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Keywords | 電気 / 電子材料 |
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| Research Abstract |
Novel cladding layer materials were developed to realize high-performance green semiconductor laser diodes (LDs). II-VI compound semiconductors on InP substrates and indium tin oxide (ITO) usually used as a transparent electrode were investigated as the cladding layer materials. New LD structures with ITO p-cladding layers wereproposed. From theoretical analysis of the LD structure, it was shown that sufficient optical waveguide could be realized. Deposition conditions of ITO and contact layer materials were investigated, which revealed optimum conditions for high device performances
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