2012 Fiscal Year Final Research Report
Study on High-Temperature and High-Frequency Electronic Devices
| Project/Area Number |
22560327
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | University of Fukui |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
YAMAMOTO Akio 福井大学, 大学院・工学研究科, 教授 (90210517)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 電子デバイス / 集積回路 |
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| Research Abstract |
AlGaN/GaN MISHEMTs with various dielectric materials, such as SiN, Al_2O_3, HfO_2, and ZrO_2, have been fabricated for stable high temperature operation. The ZrO_2/Al_2O_3dual dielectric film MISHEMT exhibited a gate leakage current of 1x10^-10A/mm at room temperature, which was about 3 orders of magnitude lower than that for the Schottky-gated AlGaN/GaN HEMT. The amount of increse in the gate leakage current from RT to 300 ℃ for the ZrO_2/Al_2O_3dual dielectric film MISHEMT was the lowest among devices fabricated in this work. These results indicate that the proposed ZrO_2/Al_2O_3dual dielectric film MISHEMT is promising for reducing the gate leakage current at high temperatures.
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[Presentation] Comparative hightemperature DC characterization of HEMTs with GaN and AlGaN channel layers2010
Author(s)
M. Hatano, N. Kunishio, H. Chikaoka, J. Yamazaki, Z. B. Makhzani, N. Yafune, K. Sakuno, S. Hashimoto, K. Akita, Y. Yamamoto, and M. Kuzuhara
Organizer
CS-MANTECH
Place of Presentation
Portland
Year and Date
20100000
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