2012 Fiscal Year Final Research Report
Development of a new magnetic tunnel junction structure using a monocrystalline spinel-based tunnel barrier
| Project/Area Number |
22686066
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Structural/Functional materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
SUKEGAWA Hiroaki 独立行政法人物質・材料研究機構, 磁性材料ユニット, 研究員 (30462518)
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| Project Period (FY) |
2010 – 2012
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| Keywords | スピントロニクス |
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| Research Abstract |
Tunnel magnetoresistance (TMR) devices with a monocrystalline MgAl2O4 barrier were successfully developed. The lattice matched heterostructure without any defects at the barrier interfaces was obtained, and TMR enhancement due to a spin-dependent coherent tunneling effect was demonstrated in the structure. In addition, it was found that cation-site disordering into the MgAl2O4 structure significantly increases the TMR. In fact, a giant TMR over 300% at room temperature was achieved by introducing the disordering into the barrier. These results demonstrate the effectiveness of MgAl2O4 as a spintronics material.
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