2011 Fiscal Year Final Research Report
High-efficient photocathode for high-brightness electron s ource and the coherence
Project/Area Number |
22740157
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Single-year Grants |
Research Field |
Particle/Nuclear/Cosmic ray/Astro physics
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Research Institution | Nagoya University |
Principal Investigator |
KUWAHARA Makoto 名古屋大学, エコトピア科学研究所, 特任講師 (50377933)
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Project Period (FY) |
2010 – 2011
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Keywords | 加速器 / 半導体光物性 / 量子スピン / 量子デバイス |
Research Abstract |
We have achieved a highly quantum efficiency(QE) and a robustness using a wide-band-gap semiconductor. A QE of InGaN-GaN superlattice is about 1. 5% in a wavelength of 300 nm, which is tenfold higher than an ordinal photocathode such as GaAs-GaAsP superlattice. Moreover, we have also realized a high durability against residual molecules in a vacuum using the wide-band-gap semiconductor photocathode.
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[Journal Article] Dark lifetime degradation of GaAs photo-cathode at higher temperature2011
Author(s)
M. Kuriki, C. Shonaka, H. Iijima, D. Kubo, H. Okamoto, H. Higaki, K. Ito, M. Yamamoto, T. Konomi, S. Okumi, M. Kuwahara, T. Nakanishi
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Journal Title
Nucl. Instr. and Meth
Volume: A637
Pages: S87-S90
Peer Reviewed
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[Journal Article] Development of a 500-kV photocathode DC gun for ERLs2011
Author(s)
N Nishimori, R Nagai, M Yamamoto, Y Honda, T Miyajima, H Iijima, M Kuriki, M Kuwahara, S Okumi, T Nakanishi, and R Hajima
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Journal Title
J. Phys.: Conf. Ser
Volume: 298
Pages: 012005
Peer Reviewed
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