Development of Fundamental Technologies of III-Nitride Semiconductor Optical Devices with "1-monolayer" Quantum Well Structures

2014 Fiscal Year Final Research Report

• Project/Area Number: 23246056
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Chiba University
• Principal Investigator: YOSHIKAWA Akihiko 千葉大学, 学術研究推進機構・産業連携研究推進ステーション, 特任教授 (20016603)
• Co-Investigator(Kenkyū-buntansha): KUSAKABE Kazuhide 千葉大学, 学術研究推進機構・産業連携研究推進ステーション, 特任准教授 (40339106) ; ITOI Takaomi 千葉大学, 大学院工学研究科, 准教授 (50333670) ; ISHITANI Yoshihiro 千葉大学, 大学院工学研究科, 教授 (60291481)
• Project Period (FY): 2011-04-01 – 2015-03-31
• Keywords: 薄膜・量子構造 / 窒化物半導体 / 太陽電池

Outline of Final Research Achievements

We have investigated and developed to control of structural/material properties of InN/GaN quasi-ternary alloys and apply them to III-Nitride solar cells, based on high structural perfection of “1-monolayer-InN”/GaN and its unique self-organized deposition process at remarkably high temperatures.
The coherent (InN)1/(GaN)4 short-period superlattices with continuum electronic band states were successfully realized by MBE structural control. These pave the way to practical band engineering in the InN/GaN quasi-ternary alloys. Furthermore, InGaN/pn-GaN solar cells were grown by MOVPE, where InGaN active layers were designed as InN/GaN quasi-ternary alloys and grown based on the developed MBE process. The junction properties of solar cells were drastically improved, and the record junction-resistance-values higher than 20 MΩ・cm2, or detection limit, were demonstrated.

Free Research Field

半導体物性および半導体デバイス