2015 Fiscal Year Final Research Report
Creation of New Functionalities by Integration of Room-Temperature Operating Single Electron Transistors and Large-Scale CMOS Circuits
Project/Area Number |
23246064
|
Research Category |
Grant-in-Aid for Scientific Research (A)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
|
Research Institution | The University of Tokyo |
Principal Investigator |
|
Co-Investigator(Renkei-kenkyūsha) |
Saraya Takuya 東京大学, 生産技術研究所, 助手 (90334367)
|
Project Period (FY) |
2011-04-01 – 2016-03-31
|
Keywords | 単電子トランジスタ / Beyond CMOS / CMOS / 集積回路 / MOSFET / クーロンブロッケード振動 / ナノワイヤ |
Outline of Final Research Achievements |
The objective of this research is to create new functionalities by the integration of room-temperature operating silicon single electron transistors and CMOS circuits. By establish the fabrication process of the integration of silicon single electron transistors and CMOS circuits, the control of single electron transistors by CMOS circuits have been successfully demonstrated.
|
Free Research Field |
集積デバイス工学
|