Development of cryogenic readout integrated circuit (ROIC) for next generation far-infrared imaging sensors

2013 Fiscal Year Final Research Report

• Project/Area Number: 23340053
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Astronomy
• Research Institution: Japan Aerospace Exploration Agency
• Principal Investigator: WADA Takehiko 独立行政法人宇宙航空研究開発機構, 宇宙科学研究所, 助教 (50312202)
• Co-Investigator(Kenkyū-buntansha): ONAKA Takashi 東京大学, 大学院・理学系研究科, 教授 (30143358) ; NAGATA Hirohisa 宇宙航空研究開発機構, 宇宙科学研究所, 特定課題共同研究員 (20399299) ; SUZUKI Toyoaki 宇宙航空研究開発機構, 宇宙科学研究所, 宇宙航空プロジェクト研究員 (30534599) ; KANEDA Hidehiro 名古屋大学, 大学院・理学研究科, 教授 (30301724)
• Research Collaborator: NAGASE Koichi 総合研究大学院大学, 物理科学研究科, 学生
• Project Period (FY): 2011-04-01 – 2014-03-31
• Keywords: 赤外線天文学 / 極低温 / 集積回路 / 画像センサ / テラヘルツ / CMOS / FD-SOI

Research Abstract

We are developing cryogenic readout integrated circuit (ROIC) for far-infrared imaging sensors. We have evaluated characteristics of MOSFET fabricated by fully-depleted silicon on insulator (FD-SOI) technology and find that both p-channel and n-channel MOSFETs show excellent performance even at cryogenic temperature (below 4K). We have designed and fabricated circuit elements required for ROICs, such as operational amplifiers, analog switch, and digital circuit. We have found that operational amplifiers reported by Nagata et al. (2009) suffers from unexpected oscillation induced by parasitic capacitance of cables between cryogenic stage and room temperature stage. We have also found that the oscillation can be eliminated by applying a source follower buffer fabricated by FD-SOI CMOS technology. We also demonstrated that the analog switch has an off-leak current that is small enough for far-infrared imaging sensors. Finally we have successfully design and fabricated 2x2 array ROIC.

Research Products

• [Journal Article] Molecular-Beam Epitaxial Growth of a Far-Infrared Transparent Electrode for Extrinsic Germanium Photoconductors (2012)
  • Author(s): Toyoaki Suzuki, Takehiko Wada, Kazuyuki Hirose, Hironobu Makitsubo, and Hidehiro Kaneda
  • Journal Title: Publications of the Astronomical Society of the Pacific Volume: 124 Pages: 823-829
  • DOI: 10.1086/667391
  • Peer Reviewed
• [Journal Article] Development of Low Power Cryogenic Readout Integrated Circuits Using Fully-Depleted-Silicon-on-Insulator CMOS Technology for Far-Infrared Image Sensors (2012)
  • Author(s): T. Wada, et al
  • Journal Title: J. Low Temp. Phys Volume: 167 Pages: 602-608
  • DOI: 10.1007/s10909-012-0461-6
  • Peer Reviewed
• [Journal Article] Development of cryogenic electronics for far-infrared astronomical focal plane array (2011)
  • Author(s): Hirohisa Nagata, Takehiko Wada, et al
  • Journal Title: IEICE Trans. Commun Volume: E94-B Pages: 2952-2960
  • DOI: 10.1587/transcom.E94.B.2952
  • Peer Reviewed
• [Presentation] Cryogenic CMOS analog switch for far-infrared image sensors (2013)
  • Author(s): Koichi Nagase, Takehiko Wada, Hirokazu Ikeda, Yasuo Arai, Morifumi Ohno
  • Organizer: International Conference on Space, Aeronautical and Navigational Electronics 2013
  • Place of Presentation: Vietnam National Satellite Center, Melia Hotel, Hanoi, Vietnam
  • Year and Date: 2013-12-02
• [Presentation] Development for germanium FIR image sensors (2013)
  • Author(s): Takehiko Wada, Hidehiro Kaneda, Yasuo Arai, Yasuki Hattori, Hirokazu, Ikeda, Koudai Kobata, Koichi Nagase, Toyoaki Suzuki, Kotomi Tanaka, Kentaroh Watanabe, Hidehiko Nakaya, Morifumi Ohno, Shunsuke Baba, Chihiro Kochi
  • Organizer: 10th International Workshop On Low Temperatures Electronics
  • Place of Presentation: Universite Paris Diderot, Paris, France
  • Year and Date: 2013-10-16
• [Presentation] Development of cryogenic readout circuit for far-infrared image sensors with fully-depleted silicon-on-insulator (FD-SOI) CMOS process (2013)
  • Author(s): Koichi Nagase, Takehiko Wada, Hirokazu Ikeda, Yasuo Arai, Morifumi Ohno
  • Organizer: 10th International Workshop On Low Temperatures Electronics
  • Place of Presentation: Universite Paris Diderot, Paris, France
  • Year and Date: 2013-10-15
• [Presentation] 遠赤外線画像センサーのためのFD-SOI-CMOS 集積回路の特性ばらつき評価 (2013)
  • Author(s): 長勢晃一, 和田武彦, 池田博一, 鈴木仁研, 新井康夫, 大野守史
  • Organizer: 日本天文学会2013年春季年会
  • Place of Presentation: 埼玉大学
  • Year and Date: 2013-03-20
• [Presentation] サブ波長構造を利用した単一材料シリコン赤外線多層干渉フィルタ (2013)
  • Author(s): 和田武彦, 槙坪宏展, 三田 信, 鈴木仁研
  • Organizer: 電子情報通信学会2013年総合大会
  • Place of Presentation: 岐阜大学
  • Year and Date: 2013-03-19
  • Invited
• [Presentation] Development of low power cryogenic readout integrated circuits using fully-depleted-silicon-on-insulator CMOS technology for far-infrared image sensors (2011)
  • Author(s): T. Wada, et al
  • Organizer: 14th International Workshop on Low Temperature Detectors
  • Place of Presentation: Heidelberg University
  • Year and Date: 2011-08-04
• [Presentation] 遠赤外線画像センサのためのFD-SOI-CMOS 集積回路の開発
  • Author(s): 和田武彦, 他
  • Organizer: 日本天文学会2011年秋季年会