2013 Fiscal Year Final Research Report
Generation and detection of spin current in p-type nonmagnetic semiconductors
Project/Area Number |
23360002
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
|
Research Institution | Tohoku University |
Principal Investigator |
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Project Period (FY) |
2011-04-01 – 2014-03-31
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Keywords | スピントロニクス |
Research Abstract |
By using a ferromagnetic semiconductor (Ga,Mn)As/nonmagnetic semiconductor p-GaAs, we have succeeded to generate spin current in p-GaAs by spin pumping and to detect it by electrical voltage induced by the inverse spin Hall effect. We have shown that the voltage is also induced by the galvanomagnetic effects in (Ga,Mn)As, and established the method for separating the voltages of different origins. We have shown that the method is applicable to metallic systems such as Py/Pt bilayers.
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