2013 Fiscal Year Final Research Report
The fabrication of the novel semiconducting material for solar cells which does not use a rare metal
| Project/Area Number |
23560357
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Gunma University |
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Principal Investigator |
OZAKI Shunji 群馬大学, 理工学研究科, 准教授 (80302454)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 多元化合物半導体結晶成長 |
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| Research Abstract |
The quaternary semiconductor Cu2ZnSnSe4 and Cu2ZnSnS4 crystals were grown by the vertical Bridgman method. Optical absorption measurements indicate that both Cu2ZnSnSe4 and Cu2ZnSnS4 are direct-gap semiconductors, and having the band gap energies of 1.12 and 1.48 eV at 10 K, respectively. The thermoreflectance spectra reveal distinct structures at energies of the E0-E6 critical points (CP's). From the first-principle band-structure calculations, these CP's are assigned to specific points in the Brillouin zone.
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