Research on green nanodevices toward the realization of ultra-low power LSI

2014 Fiscal Year Final Research Report

• Project/Area Number: 23560395
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Kobe University
• Principal Investigator: TSUCHIYA Hideaki 神戸大学, 工学(系)研究科(研究院), 准教授 (80252790)
• Project Period (FY): 2011-04-28 – 2015-03-31
• Keywords: 高移動度材料 / グラフェンFET / ナノワイヤFET / ジャンクションレストランジスタ / モンテカルロシミュレーション / 原子論 / 量子力学的効果 / バリスティック輸送

Outline of Final Research Achievements

We have developed a quantum Wigner Monte Carlo simulator and an atomistic ballistic simulator, in order to predict the device performance of emerging MOSFETs with new channel materials and new device structures. For III-V MOSFETs, the increase of a leakage current due to source-drain direct tunneling and degradation of the current drive due to a small DOS should be eliminated to outperform conventional Si MOSFETs. Among graphene nanoribbon, bilayer graphene, and graphene nanomesh structures, the graphene nanoribbon structure exhibited the best device performance as a FET channel. A junctionless transistor was shown to be a potential candidate for an ultrascaled integrated device, because a roughness scattering at the channel-gate oxide interface can be reduced.

Free Research Field

工学