2013 Fiscal Year Final Research Report
Study of optical modulation by surface plasmon resonance using MOS structure
| Project/Area Number |
23560399
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Hiroshima University |
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Principal Investigator |
TABEI Tetsuo 広島大学, ナノデバイス・バイオ融合科学研究所, 特任助教 (40536124)
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| Co-Investigator(Kenkyū-buntansha) |
YOKOYAMA Shin 広島大学, ナノデバイスバイオ融合科学研究所, 教授 (80144880)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 光変調器 / シリコンフォトニクス / 表面プラズモン |
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| Research Abstract |
In order to develop a silicon optical modulator with features as compact footprint, high extinction ratio and low power consumption, optical modulation based on surface plasmon resonance using metal-oxide-semiconductor (MOS) structure is verified by numerical analysis and experimental. A surface plasmon is a coupling of electromagnetic wave and collective oscillation of electrons, generating at the interface of metal and dielectric. From the numerical analysis, it is confirmed that the proposed optical modulator with sizes of a few tens of um has high extinction ratio. The proposed optical modulator is fabricated actually, and the light modulation which seems to be due to surface plasmon resonance is confirmed.
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