Quantum functionalities and device applications of two-dimensional electron system at oxide interfaceshy

2016 Fiscal Year Final Research Report

• Project/Area Number: 24226002
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: The University of Tokyo
• Principal Investigator: Kawasaki Masashi 東京大学, 大学院工学系研究科(工学部), 教授 (90211862)
• Co-Investigator(Renkei-kenkyūsha): KOZUKA Yusuke 東京大学, 大学院工学系研究科, 講師 (70580372)
• Project Period (FY): 2012-05-31 – 2017-03-31
• Keywords: 表面・界面物性 / 量子伝導 / 強誘電体 / 超伝導材料

Outline of Final Research Achievements

This research is aimed at controlling two-dimensional electrons accumulated at oxide polar interfaces and developing new quantum conduction functions. By accumulating a small amount of electrons at ZnO polar interface, We have achieved very high electron mobility over one million cm2/Vs and observed new even-demoninator fractional quantum Hall states of ν=3/2. Quantum scattering time of this system is now as high as in the top-quality GaAs two-dimensional gas. By accumulating a large amount of electrons at interfaces between ferroelectric titanate films and ionic liquids, we have demonstrated novel transistor operation with ferroelectric channel materials.

Free Research Field

物性物理