Advancement of Filtered Arc Deposition System and Fabrication and Processing of High-Quality Hydrogen-Free DLC Films

2014 Fiscal Year Final Research Report

• Project/Area Number: 24246048
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Power engineering/Power conversion/Electric machinery
• Research Institution: Toyohashi University of Technology
• Principal Investigator: TAKIKAWA Hirofumi 豊橋技術科学大学, 工学(系)研究科(研究院), 教授 (90226952)
• Co-Investigator(Kenkyū-buntansha): KIYOHARA Syuji 舞鶴工業高等専門学校, 電子制御工学科, 准教授 (40299326) ; KANEKO Satoru 神奈川県産業技術センター, その他部局等, 研究員 (40426359) ; YAMADA Kenji 石川工業高等専門学校, 電気情報工学科, 准教授 (50249778) ; HABUCHI Hitoe 岐阜工業高等専門学校, 電子情報工学科, 准教授 (90270264) ; TANOUE Hideto 北九州工業高等専門学校, 電気電子工学科, 講師 (50580578)
• Co-Investigator(Renkei-kenkyūsha): SUDA Yoshiyuki 豊橋技術科学大学, 工学研究科, 准教授 (70301942) ; SHIBATA Takayuki 豊橋技術科学大学, 工学研究科, 教授 (10235575) ; KAWASHIMA Takahiro 豊橋技術科学大学, 工学研究科, 准教授 (50378270)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: フィルタードアーク蒸着 / ダイヤモンドライクカーボ ン膜 / 微細加工 / ナノテクノロジー / パターニング / エッチング

Outline of Final Research Achievements

In this research, the filtered arc plasma beam deposition system and technique were developed, constructed and established for the fabrication of high-quality hydrogen-free amorphous carbon (a-C) film had uniform thickness on 4-inch Si wafer. The techniques to control pure-carbon plasma beam and substrate holder motion were developed to achieve a-C films had uniform thickness. The thickness change of a-C film on Si wafer was inhibited below 5% in 500 nm thickness. In addition, the variations of the film properties for the deposition conditions of a-C films were clarified, and the primary knowledge for the processing of hydrogen-free a-C films was achieved. The fabricated high-quality a-C films on Si wafers are expected as the functional substrates for MEMS.

Free Research Field

プラズマ応用工学 / 薄膜/ナノ材料合成・表面処理 / 再生可能エネルギー