Electroluminescence and its wavelength control of indirect transition-type semiconductor by dressed-photon-phonons

2015 Fiscal Year Final Research Report

• Project/Area Number: 24360023
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Applied optics/Quantum optical engineering
• Research Institution: The University of Tokyo
• Principal Investigator: OHTSU Motoichi 東京大学, 工学(系)研究科(研究院), 教授 (70114858)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Keywords: ガリウム燐 / 発光ダイオード_ / 亜鉛 / バンドギャップ / ドレスト光子 / フォノン / ホモ接合

Outline of Final Research Achievements

A GaP p-n homojunction bulk crystal was formed by ion-implanting Zn atoms (p-type impurity atoms) to a GaP single crystal substrate containing S atoms (n-type impurity atoms). As a result of the dressed-photon-phonon-assisted annealing, strong electroluminescence was obtained in the energy region higher than the bandgap energy. The optimum ratio between the injected current number and irradiated photon number condition for this annealing was found to be 1:1.3. By this finding, it was confirmed that the dressed-photon-phonon-assisted annealing was based on the stimulated emission of photons.

Free Research Field

ドレスト光子工学