Study on logic in memory device utilizing a spin wave phase as binary information

2014 Fiscal Year Final Research Report

• Project/Area Number: 24360137
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Kyushu University
• Principal Investigator: MATSUYAMA Kimihide 九州大学, システム情報科学研究科(研究院, 教授 (80165919)
• Co-Investigator(Kenkyū-buntansha): TANAKA Terumitsu (20423387)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 電子デバイス・機器 / スピンエレクトロニクス / データストレージ / スピン波 / マイクロマグネティクス / マグノニクス

Outline of Final Research Achievements

Numerical and experimental studies have been executed to develop a novel logic in memory architecture, where domain walls were utilized as the stored binary information and the logic operation was performed through their interaction with a propagating spin wave.
It was confirmed by micromagnetics simulations that a spin wave phase lag induced with the dynamic interaction between the spin wave and the domain can be applied to logic gate operation. Prototype devices, consist of spin wave propagation truck, generator and inductive detector have been fabricated with the lithographic technique. Logic output ratio exceeding 20 dB was successfully achieved in the micro-structured sample.

Free Research Field

磁気デバイス工学