Fundamental Circuit Theories for Memristors and Resistive RAMs

2014 Fiscal Year Final Research Report

• Project/Area Number: 24360145
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Communication/Network engineering
• Research Institution: Hokkaido University
• Principal Investigator: ASAI TETSUYA 北海道大学, 情報科学研究科, 准教授 (00312380)
• Co-Investigator(Renkei-kenkyūsha): YANAGIDA Tsuyoshi 大阪大学, 産業科学研究所, 准教授 (50420419) ; ISHIMURA Kazuyoshi 北海道大学, 大学院情報科学研究科 ; GONG Xiyuan 北海道大学, 大学院情報科学研究科 ; MATSUURA Masakazu 北海道大学, 大学院情報科学研究科
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: メモリスタ / シナプス / 電子回路 / 抵抗変化メモリ / ReRAM

Outline of Final Research Achievements

An elemental device for possible brain-inspired hardware, i.e., a neuronal interconnect (synaptic) device that connects neurons electrically through nonvolatile resistor, was explored. Through extensive experimentals of the prototype device, the following results were obtained: i) transient characteristics of the ReRAM are qualitatively equivalent to characteristics of a mathematical model of memristors proposed by Leon Chua, ii) conductance of the ReRAM does not change when one applies voltage spikes to a CR circuit consisting of the ReRAM and a capacitor, iii) when the capacitor is discharged via an additional current path during the charge and discharge process in ii) above, conductance of the ReRAM is certainly increased and decreased, and iv) by combining properties of ii) and iii) above, conductance of the STDP device is certainly modulated (increased or held) by the input spike timing.

Free Research Field

集積回路工学