Solid-phase crystallization of oxide thin films on nanoscale-controlled substrates via post-annealing under uniaxial compression for exploring the novel functionalities

2015 Fiscal Year Final Research Report

• Project/Area Number: 24360269
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Inorganic materials/Physical properties
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Yoshimoto Mamoru 東京工業大学, 総合理工学研究科(研究院), 教授 (20174998)
• Co-Investigator(Kenkyū-buntansha): YODO Tokuo 大阪工業大学, 工学部, 教授 (70288752)
• Co-Investigator(Renkei-kenkyūsha): MATSUDA Akifumi 東京工業大学, 大学院総合理工学研究科, 講師 (80621698)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Keywords: 結晶構造制御 / 一軸圧縮 / 酸化物薄膜 / 固相結晶化 / エピタキシャル成長 / 酸化バナジウム / 酸化モリブデン

Outline of Final Research Achievements

In this study, the influence of thermal annealing under uniaxial compression on solid-state crystallization of electronic functional oxide thin films such as VOx or MoOx was investigated for exploring the novel functionalities. As a result, it was found that the epitaxial VO2 and epitaxial V2O3 thin films were obtained through annealing under uniaxial compression of 1 MPa and 10-30 MPa, respectively. Diffusion of oxygen atoms along the layered structure of VOx film under uniaxial compression was thought to have an important role for phase-selective solid state crystallization in this process.

Free Research Field

機能材料科学