2014 Fiscal Year Final Research Report
Preparation of low-temperature SiNx films by using new deposition method applicable to 3-dimensional LSI
| Project/Area Number |
24560361
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kitami Institute of Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
NOYA Atsushi (60133807)
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| Co-Investigator(Renkei-kenkyūsha) |
MACHIDA Hideaki (30535670)
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| Research Collaborator |
SATO Masaru
NAKAMURA Tomoji
NAKATA Yoshihiro
KOBAYASHI Yasushi
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Keywords | 薄膜プロセス / シリコン貫通ビア / 3次元集積回路 / 低温プロセス / 絶縁バリヤ / SiNx膜 |
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| Outline of Final Research Achievements |
In the through silicon via process for the 3-dimensional LSI, SiNx films of high density are strongly required to prepare at low temperatures. As a solution of this issue, we propose the use of SiNx films deposited by reactive sputtering. We can obtain the sputtered SiNx films of high density by the deposition without substrate heating. This film tolerated annealing at 700℃ for 1 h without Cu diffusion. It implies that the low-temperature deposited high density SiNx film is a useful insulating barrier. In addition, the reason why the PECVD-SiNx films show low density is clarified by comparing the characteristics of SiNx films by sputtering and PECVD methods.
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| Free Research Field |
工学
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